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Volumn 2, Issue 2, 2003, Pages 1249-1254

Linear and Non-linear Effects of N-Silicon: Theory and Simulation

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; FERMI LEVEL; LINEAR SYSTEMS; NONLINEAR SYSTEMS; SHEAR STRESS; SILICON; STRESSES; THERMAL EFFECTS;

EID: 1542363290     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (7)
  • 1
    • 0032650679 scopus 로고    scopus 로고
    • A kinetic formulation of piezoresistance in N-type silicon: Application to non-linear effects
    • Charbonnieras A.R., Tellier C.R., A kinetic formulation of piezoresistance in N-type silicon: Application to non-linear effects, Eur. Phys. J. AP, vol 7, pp 1-11, 1999
    • (1999) Eur. Phys. J. AP , vol.7 , pp. 1-11
    • Charbonnieras, A.R.1    Tellier, C.R.2
  • 2
    • 36149023347 scopus 로고
    • Transport and deformation potential theory for many-valley semiconductors with anisotropic scattering
    • Herring C., Vogt E., Transport and deformation potential theory for many-valley semiconductors with anisotropic scattering, Phys. Rev., vol 101, pp 944-961, 1956
    • (1956) Phys. Rev. , vol.101 , pp. 944-961
    • Herring, C.1    Vogt, E.2
  • 3
  • 5
    • 0012024471 scopus 로고    scopus 로고
    • Linear and non-linear piezoresistance coefficients in cubic semiconductors. I. Theoretical formulations
    • Durand S., Tellier C.R., Linear and non-linear piezoresistance coefficients in cubic semiconductors. I. Theoretical formulations, J. Phys. III France, vol 6, pp 237-266, 1996
    • (1996) J. Phys. III France , vol.6 , pp. 237-266
    • Durand, S.1    Tellier, C.R.2
  • 6
    • 34249846476 scopus 로고
    • Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects
    • Pfann W.G., Thurston R.N., Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects, J. Appl. Phys., vol 32, pp 2008-2019, 1961
    • (1961) J. Appl. Phys. , vol.32 , pp. 2008-2019
    • Pfann, W.G.1    Thurston, R.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.