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Volumn 1, Issue 1, 2002, Pages 499-502

Relative Humidity Sensors Based on Porous Polysilicon and Porous Silicon Carbide

Author keywords

Harsh environments; RH sensors; Temperature effects

Indexed keywords

ATMOSPHERIC HUMIDITY; CHEMICAL SENSORS; ELECTROCHEMISTRY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; REDUCTION; SILICON CARBIDE; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILMS;

EID: 1542361477     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (10)

References (12)
  • 3
    • 0043051422 scopus 로고    scopus 로고
    • Surface modification of porous silicon
    • LT Canham (Ed.), INSPEC, IEE
    • JN Chazalviel, F Ozanam, "Surface modification of porous silicon", in Properties of Porous Silicon, LT Canham (Ed.) pp.59-65, INSPEC, IEE (1997)
    • (1997) Properties of Porous Silicon , pp. 59-65
    • Chazalviel, J.N.1    Ozanam, F.2
  • 4
    • 0037186194 scopus 로고    scopus 로고
    • Recent achievements in miniaturised humidity sensors-a review of transduction techniques
    • ZM Rittersma, "Recent achievements in miniaturised humidity sensors-a review of transduction techniques", Sensors & Actuators A96 (2002) 196-210
    • (2002) Sensors & Actuators , vol.A96 , pp. 196-210
    • Rittersma, Z.M.1
  • 8
    • 0015145298 scopus 로고
    • Hall mobility in chemically deposited polysilicon
    • TI Kamins, "Hall mobility in chemically deposited polysilicon", J. Applied Physics, 42 (1971) 4357-4365.
    • (1971) J. Applied Physics , vol.42 , pp. 4357-4365
    • Kamins, T.I.1
  • 10
    • 0016597193 scopus 로고
    • The electrical properties of polycrystalline silicon films
    • JYW Seto, "The electrical properties of polycrystalline silicon films", J. Applied Physics, 46 (1975) 5247-5254.
    • (1975) J. Applied Physics , vol.46 , pp. 5247-5254
    • Seto, J.Y.W.1
  • 11
    • 0006003653 scopus 로고    scopus 로고
    • Porous SiC: Material properties, formation mechanism and techniques of material modification
    • Silicon Carbide and Related Materials 1995
    • AO Konstantinov, CI Harris, A Henry, E Janzén, "Porous SiC: material properties, formation mechanism and techniques of material modification", Silicon Carbide and Related Materials 1995, Institute of Physics conference series, 142 (1996) 1079-1082.
    • (1996) Institute of Physics Conference Series , vol.142 , pp. 1079-1082
    • Konstantinov, A.O.1    Harris, C.I.2    Henry, A.3    Janzén, E.4
  • 12
    • 20244363083 scopus 로고    scopus 로고
    • Comparison of porous silicon, porous polysilicon and porous silicon carbide as materials for humidity sensing applications
    • to be published
    • EJ Connolly, GM O'Halloran, HTM Pham, PM Sarro, PJ French, "Comparison of porous silicon, porous polysilicon and porous silicon carbide as materials for humidity sensing applications", (to be published in Sensors & Actuators A).
    • Sensors & Actuators A
    • Connolly, E.J.1    O'Halloran, G.M.2    Pham, H.T.M.3    Sarro, P.M.4    French, P.J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.