Spin-dependent Hall effect in semiconductor quantum wells

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 1918-1923

  Huang, H C ^a   Voskoboynikov, O ^a   Lee, C P ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEGREES OF FREEDOM (MECHANICS); ELECTRON SCATTERING; HALL EFFECT; HAMILTONIANS; HETEROJUNCTIONS; LIGHT POLARIZATION; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING;

MOTT SCATTERING; NARROW GAP SEMICONDUCTORS; ONE ELECTRONIC BAND EFFECTIVE HAMILTONIAN; RASHBA SPIN ROBIT INTERACTION; SPIN COUPLING; SPIN DEPENDENT BOTLZMANN EQUATION; SPIN DEPENDENT HALL EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1542349049     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641147     Document Type: Article

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