Investigations of Leakage Paths in Sub-0.35μm DRAM Products Using Advanced Focused Ion Beam Techniques

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 1998, Pages 289-295

  Lorenz, H ^a   Engel, C ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CONDUCTORS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); INTEGRATED CIRCUITS; ION BEAMS; LEAKAGE CURRENTS; SILICON COMPOUNDS;

FOCUSED ION BEAM (FIB) MICROSCOPES; LEAKAGE PATHS;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 1542330906     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Adler,E., DeBrosse,J.K., Geissler,S.F., Holmes,S., Jaffe,M.D., Johnson,J.B., Lloyd,B., Koburger,C.W., Lasky,J.B., Miles,G.L, Nakos,J.S., Noble,W.P.Jr., Voldmann,S.H., Armacost,M., and Ferguson,R., "The Evolution of IBM CMOS DRAM technology", IBM J.Res.Develop. Vol 39, No.1/2, January/March 1995, pp. 167-187.
2. st International Symposium for Testing and Failure Analysis, pp. 33-41, 1996.
3. nd International Symposium for Testing and Failure Analysis, pp. 401-407, 1997.
4. Bogenschütz, A. F.; "Ätzpraxis für Halbleiter", Carl Hanser Verlag MuØnchen, pp. 165, 1967.