Emission microscope and passive voltage contrast: solving a problem quickly

III-Vs Review

Volumn 9, Issue 6, 1996, Pages 46-

  Mahanpour, Mehrdad ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC GROUNDING; ELECTRON BEAMS; FAILURE ANALYSIS; HYDROFLUORIC ACID; LOGIC DEVICES; MICROSCOPES; OXIDES;

CONDUCTIVE CARBON PAINT; DEPROCESSING; EMISSION MICROSCOPE; GATE OXIDE BREAKDOWN; PASSIVE VOLTAGE CONTRAST;

SCANNING ELECTRON MICROSCOPY;

EID: 0030380169     PISSN: 09611290     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0961-1290(96)80098-6     Document Type: Article

References (1)

1. Jim Colvin A new technique to rapidly identify gate oxide leakage in field effect semiconductors using a scanning electron microscope ISTFA Symposium 1990