The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2000, Pages 231-234

  Morris, Mark ^a   Mohr, James ^a   Ortiz, Esteban ^a   Englebretson, Steven ^a  

^a ON SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ENCAPSULATION; ETCHING; FAILURE ANALYSIS; GATES (TRANSISTOR); METALLIC FILMS; MOS DEVICES; PLASTIC MOLDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SOLDERED JOINTS; SURFACE MOUNT TECHNOLOGY;

METAL BRIDGING; TMAH ETCHING;

ELECTRONICS PACKAGING;

EID: 1542300833     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. th International Symposium for Testing and Failure Analysis pp. 353-358 (1998)
2. M.J. Declercq, L. Gerzberg, and J.D. Meindl, "Optimization of the hydrazine-water solution for anisotropic etching of silicon in integrated circuit technology," J. Electrochem. Soc., vol.122, no.4, pp.545 (1975).
3. R.M. Finne and D.L. Klein, "A water-amine-complexing agent system for etching silicon," J. Electrochem. Soc., vol.114, no.9, pp.965 (1967).
4. J.B. Price, "Anisotropic etching of silicon with KOH-H2O-isopropyl alcohol," in Semiconductor Silicon, publ. Electrochemical Society, pp.339 (1973).
5. U. Schnakenberg, W. Benecke, and P. Lange, "TMAHW etchants for silicon micromachining," Proc. of IEEE Transducers '91, pp.815 (1991).