Emission Microscopy and Thermal Laser Stimulation for Backside Failure Localization

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 2001, Pages 227-235

  Beaudoin, F ^a   Desplats, R ^a   Perdu, P ^a   Patrie, D ^b   Haller, G ^b   Poirier, P ^c   Jacob, P ^d,e   Lewis, D ^f  

^a CNES   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITÉ DE CAEN   (France)

^d EM Microelectronic   (Switzerland)

^e SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^f UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAMERAS; CHARGE COUPLED DEVICES; FAILURE ANALYSIS; FLIP CHIP DEVICES; LASER BEAMS; LEAKAGE CURRENTS; MOS DEVICES; PHOTONS; POLYSILICON; QUANTUM EFFICIENCY; SCANNING; TRANSMISSION ELECTRON MICROSCOPY;

EMISSION MICROSCOPY; LASER-SCANNING MICROSCOPES; THERMAL LASER STIMULATION;

INTEGRATED CIRCUITS;

EID: 1542300675     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Wu N.M., Weaver K. and Lin J.H. ISTFA (1996) 393-399.
2. Barton D.L., Bernhard-Höfer K. and Cole Jr. E.I. Microelec. Reliab. (1999) 721-730.
3. Nikawa K. and Tozaki S. ISTFA (1993) 303-310
4. Cole Jr. E.I., Tangyunyong P. and Barton D.L. IRPS (1998) 129-136.
5. Beaudoin F., Desplats R., Perdu P. and Lewis D. This conference