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Volumn , Issue , 2001, Pages 319-322

A New Deprocessing Technique by Selective Wet-Etch of Passivation and Inter Metal Dielectric Layers for Submicron Devices

Author keywords

[No Author keywords available]

Indexed keywords

DEPROCESSING TECHNIQUES; INTER METAL DIELECTRIC (IMD) LAYERS; WET ETCHING;

EID: 1542270671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (5)
  • 1
    • 1542283962 scopus 로고    scopus 로고
    • Wet chemical deprocessing techniques
    • ASM, Materials Park, Ohio
    • th Edition, pp.233-242, ASM, Materials Park, Ohio, 1999.
    • (1999) th Edition , pp. 233-242
    • Perungulam, S.1    Wills, K.S.2
  • 2
    • 1542373907 scopus 로고    scopus 로고
    • Plasma delayering of integrated circuits
    • ASM, Materials Park, Ohio
    • th Edition, pp.243-252, ASM, Materials Park, Ohio, 1999.
    • (1999) th Edition , pp. 243-252
    • Crockett, A.1    Vanderlin, W.2
  • 4
    • 84862051086 scopus 로고
    • Plasma etching
    • ASM, Materials Park, Ohio
    • rd Edition, pp.121-124, ASM, Materials Park, Ohio, 1993.
    • (1993) rd Edition , pp. 121-124
    • Beall, J.1
  • 5
    • 1542314126 scopus 로고
    • Reactive ion etch recipes for failure analysis
    • ASM, Materials Park, Ohio
    • David S. Kiefer, "Reactive ion etch recipes for failure analysis, " Microelectronic Failure Analysis Desk Reference, pp.125-130, ASM, Materials Park, Ohio, 1993.
    • (1993) Microelectronic Failure Analysis Desk Reference , pp. 125-130
    • Kiefer, D.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.