Photoluminescence characteristics of ZnGa2O4-xM x:Mn2+ (M=S, Se) thin film phosphors grown by pulsed laser ablation

Thin Solid Films

Volumn 479, Issue 1-2, 2005, Pages 238-244

  Bae, Jong Seong ^a   Shim, Kyoo Sung ^a   Moon, Byung Kee ^a   Choi, Byung Chun ^a   Jeong, Jung Hyun ^a   Yi, Soung Soo ^b   Kim, Jung Hwan ^c  

^a Pukyong National University   (South Korea)

^b Silla University   (South Korea)

^c Dong Eui University   (South Korea)

Author keywords

Laser ablation; Luminescence; Thin film phosphors; ZnGa2O4 xM x:Mn2+ (M=S, Se)

Indexed keywords

CERAMIC MATERIALS; CRYSTALLINE MATERIALS; FLAT PANEL DISPLAYS; LASER ABLATION; OXYGEN; PHOSPHORS; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SELENIUM; SULFUR; THIN FILMS;

OXYGEN PRESSURE; PLASMA DISPLAY PANELS; SUBSTRATE TEMPERATURE; THIN FILM PHOSPHORS;

ZINC COMPOUNDS;

EID: 15344350428     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.181     Document Type: Article

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