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Applied Physics A: Materials Science and Processing

Volumn 76, Issue 3, 2003, Pages 433-437

Photoluminescence behavior of pulsed laser deposited ZnGa2O4 thin-film phosphors grown on various substrates

(6) Yi, S S a Bae, J S b Moon, B K b Jeong, J H b Kim, I W c Park, H L d

a Silla University (South Korea)

b Pukyong National University (South Korea)

c University of Ulsan (South Korea)

d Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; MORPHOLOGY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; PULSED LASER DEPOSITION; STOICHIOMETRY; SUBSTRATES; SURFACES; THERMAL EFFECTS; THIN FILMS; ZINC COMPOUNDS;

CRYSTALLINITY; OXYGEN PRESSURE; SUBSTRATE TEMPERATURE; ZINC GALLIUM OXALATE;

PHOSPHORS;

EID: 0037341013 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-002-1898-2 Document Type: Article

Times cited : (12)

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