Doped versus pure TGS crystals

Materials Science and Engineering: B

Volumn 118, Issue 1-3, 2005, Pages 141-146

  Berbecaru, C ^a   Alexandru, H V ^a   Pintilie, L ^b   Dutu, A ^a   Logofatu, B ^a   Radulescu, R C ^c  

^a UNIVERSITY OF BUCHAREST   (Romania)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^c Atlantic Technological University   (Ireland)

Author keywords

Doped crystals; Ferroelectric parameters; Triglycine sulphate crystals

Indexed keywords

ELECTRON EMISSION; FERROELECTRIC MATERIALS; HYSTERESIS; INFRARED DETECTORS; INTEGRATED CIRCUITS; LIGHT POLARIZATION; PERMITTIVITY; PYROELECTRICITY; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS; THERMAL EFFECTS;

CURIE POINTS; DOPED CRYSTALS; FERROELECTRIC PARAMETERS; TRIGLYCINE SULPHATE CRYSTALS;

SINGLE CRYSTALS;

EID: 15344347930     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.069     Document Type: Conference Paper

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