Photoinduced changes in the valence band states of GeXAs 40-XS60 thin films

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 341-344

  Gonbeau, D ^a   Pamukchieva, V ^b   Dedryvere, R ^a   Skordeva, E ^b   Arsova, D ^b  

^a UNIVERSITÉ DE PAU ET DES PAYS DE L'ADOUR   (France)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

Amorphous Ge As S; Thin films; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; ELECTRON IRRADIATION; ELECTRONIC STRUCTURE; GERMANIUM COMPOUNDS; METALLIC FILMS; PHOTOSENSITIVITY; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC STATES; PHOTOINDUCED CHANGES; STRUCTURAL CHANGES; VALENCE BANDS;

PHOTOSENSITIVE GLASS;

EID: 15344338998     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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