A surface photovoltage spectroscopy system used for minority carrier diffusion length measurements on floating zone silicon

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 533-536

  Kirilov, K ^a   Donchev, V ^a   Ivanov, Tsv ^a   Germanova, K ^a   Vitanov, P ^b   Ivanov, P ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b CTRL LAB SOLAR ENER NEW ENER S   (Bulgaria)

Author keywords

Diffusion length; MIS structure; Surface photovoltage spectroscopy; Surface recombination velocity

Indexed keywords

DIFFUSION LENGTH; METAL-INSULATOR-SEMICONDUCTOR STRUCTURE; SURFACE RECOMBINATION VELOCITY; SURFACE VOLTAGE SPECTROSCOPY (SPV);

COMPUTER SIMULATION; CRYOSTATS; ELECTRIC POTENTIAL; ELECTRON TRANSITIONS; LENSES; LIGHT MODULATION; LIGHTING; MONOCHROMATORS; NITROGEN; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR MATERIALS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

SILICON;

EID: 15244356632     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (8)

1. L. Kronik, Y. Shapira, Surf. Sci. Rep. 37, 1 (1999) and references therein.
2. D. K. Schroder, Meas. Sci. Technol. 12, R16 (2001).
3. K. Germanova, V. Donchev, Ch. Hardalov, M. Saraydarov, in: Photovoltaic and Photoactive Materials - Properties, Technology and Applications, Eds. J. Marshall and D. Dimova-Malinovska, Kluwer Academic Publisher, Netherlands, 2002, p. 317.
4. P. Vitanov, A. Harizanova, T. Ivanova, K. Ivanova, J. Materials Science: Materials in Electronics, 14, 757, (2003)
5. A. M. Goodman, J. Appl. Phys. 32, 2550 (1961).
6. J. Lagowski, P. Edelma, M. Dexter, W. Henley, Semicond. Sci. Technol. 7, A185 (1992).
7. M. A. Green, M. J. Keevers, Prog. Photovolt. 3, 189 (1995).
8. th European Photovoltaic Solar Energy Conference, June 2004, Paris p. 132 (2004).