Temperature-dependent effects in high-speed travelling-wave electroabsorption modulators

Electronics Letters

Volumn 41, Issue 4, 2005, Pages 209-211

  Yu, Y ^a,b   Lewen, R ^b,c   Westergren, U ^b   Thylen, L ^b   Irmscher, S ^b   Eriksson, U ^c  

^a ZHEJIANG UNIVERSITY   (China)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c Optillion AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC LINES; ELECTRIC POTENTIAL; ELECTRODES; ENERGY GAP; INTERFACES (MATERIALS); LIGHT TRANSMISSION; MODULATION; PHONONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

ELECTROABSORPTION MODULATORS (EAM); MODULATION EFFICIENCY; MULTIPLE-QUANTUM WELLS (MQW); TEMPERATURE-DEPENDENT EFFECTS; TRAVELING-WAVE ELECTRODES;

MODULATORS;

EID: 15244343356     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057840     Document Type: Article

References (6)

1. Irmascher, S., Lewen, R., and Eriksson, U: 'InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors', IEEE Photonics Technol. Lett., 2002, 14, pp. 923-925
2. Shirai, M., et al.: '40 Gbit/s electroabsorption modulators with impedence-controlled electrodes', Electron. Lett., 2003, 39, pp. 734-735
3. Lewen, R., et al.: 'Segmented transmission-line electroabsorption modulators', J. Lightwave Technol., 2004, 22, pp. 172-179
4. Livescu, G., et al.: 'Free carrier and many-body effects in absorption spectra of modulation-doped quantum wells', IEEE J. Quantum Electron., 1988, 24, pp. 1677-1689
5. Bian, Z., Christofferson, J., and Shakouri, A.: 'High power operation of electroabsorption modulators'. Proc. Conf. Dig. CLEO/QELS, Baltimore, MD, USA, 2003, Paper CTuJ5
6. Piprek, J., Chiu, Y.-J., and Bowers, J.E.: 'Analysis of multi-quantum well electroabsorption modulators'. SPIE Proceedings, Physics and Simulation of Optoelectronic Devices X, Photonics West, San Jose, CA, USA, 2002, pp. 4646-4677