Infrared spectroscopy study of Si-SiO2 structures irradiated with high-energy electrons

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 1, 2005, Pages 325-328

  Lisovskyy, I P ^a   Litovchenko, V G ^a   Mazunov, D O ^a   Kaschieva, S ^b   Koprinarova, J ^b   Dmitriev, S N ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

High energy electron irradiation; Infrared transmission spectroscopy; Si SiO2 interfaces; Si SiO2 structures

Indexed keywords

ABSORPTION; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; INFRARED SPECTROSCOPY; LATTICE CONSTANTS; OXIDATION; SILICON WAFERS; WETTING;

HIGH ENERGY ELECTRON IRRADIATION; INFRARED TRANSMISSION SPECTROSCOPY; SI-SIO2 INTERFACES; SI-SIO2 STRUCTURES;

SILICA;

EID: 15244341458     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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