Atomistic simulation of dislocation interactions with a Σ = 5 (210) grain boundary during nanoindentation of Ni

Materials Research Society Symposium Proceedings

Volumn 821, Issue , 2004, Pages 203-208

  Jang, Ho ^a   Farkas, Diana ^b  

^a Korea University   (South Korea)

^b State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; INDENTATION; LATTICE CONSTANTS; MOLECULAR DYNAMICS; NUCLEATION; VECTORS;

ATOMISTIC SIMULATION; LATTICE DISLOCATIONS; NANOINDENTATION; SLIP PLANES;

NICKEL;

EID: 14944357165     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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