Change of optical band gap and magnetization with Mn concentration in Mn-doped AlN films

Journal of Magnetism and Magnetic Materials

Volumn 290-291 PART 2, Issue , 2005, Pages 1375-1378

  Song, Young Yeal ^a   Quang, Pham Hong ^a   Pham, Van Thai ^a   Lee, Kyu Won ^b   Yu, Seong Cho ^a  

^a Chungbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Band structure; Diluted magnetic semiconductor; Magnetization saturation; Transport properties

Indexed keywords

BAND STRUCTURE; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MAGNETRON SPUTTERING; MANGANESE; PRESSURE EFFECTS; QUARTZ; SEMICONDUCTOR DOPING; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

ALN FILMS; DILUTED MAGNETIC SEMICONDUCTORS; MAGNETIZATION-SATURATION; ROOM TEMPERATURE MAGNETISM;

SEMICONDUCTING FILMS;

EID: 14944346764     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2004.11.441     Document Type: Article

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