Structural properties of directionally grown polycrystalline SiGe for solar cells

Journal of Crystal Growth

Volumn 275, Issue 3-4, 2005, Pages 467-473

  Fujiwara, Kozo ^a   Pan, Wugen ^a   Usami, Noritaka ^a   Sawada, Kohei ^a   Nomura, Akiko ^a   Ujihara, Toru ^a   Shishido, Toetsu ^a   Nakajima, Kazuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Misfit dislocation; A1. Preferential orientation; B1. Silicon germanium; B3. Solar cell

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); GERMANIUM; POLYCRYSTALLINE MATERIALS; SOLAR CELLS;

CRYSTALLOGRAPHIC ORIENTATION; PREFERENTIAL ORIENTATION; SILICON-GERMANIUM; SINGLE-CRYSTALLINE SILICON;

SILICON COMPOUNDS;

EID: 14844366598     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.023     Document Type: Article

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