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European Physical Journal B

Volumn 32, Issue 2, 2003, Pages 139-143

Band gaps and charge distribution in quasi-binary (GaSb) 1-x(InAs)x crystals

(1) Bouarissa, N a,b

a ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS (Italy)

b UNIVERSITY OF M'SILA (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

BAND-GAP SEMICONDUCTORS; CHARGE DISTRIBUTION; THERMOPHOTOVOLTAIC APPLICATIONS;

CRYSTALS;

EID: 14844299649 PISSN: 14346028 EISSN: None Source Type: Journal
DOI: 10.1140/epjb/e2003-00082-x Document Type: Article

Times cited : (14)

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