Preparation and properties of CdS thin films grown by ILGAR method

Rare Metals

Volumn 23, Issue 4, 2004, Pages 311-316

  Qiu, Jijun ^a   Jin, Zhengguo ^a   Wu, Weibing ^a   Liu, Xiaoxin ^a   Cheng, Zhijie ^a  

^a TIANJIN UNIVERSITY   (China)

Author keywords

Annealing; CdS thin film; ILGAR method; Preparation and properties

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; FILM GROWTH; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SURFACE TOPOGRAPHY; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURE; BAND GAP; ELECTRICAL PROPERTIES; ELECTRICAL RESISTIVITY; FILM THICKNESS; ION LAYER GAS REACTION;

CADMIUM SULFIDE;

EID: 14744293829     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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