A Ku-band four-stage temperature compensated PHEMT MMIC power amplifier

Microwave and Optical Technology Letters

Volumn 44, Issue 5, 2005, Pages 480-485

  Huang, C W ^a   Chang, S J ^a   Wu, W ^b   Wu, C L ^b   Chang, C S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Transcom Inc   (Taiwan)

Author keywords

Four stages; GaAs; Ku band; MMIC; Power amplifier; Temperature compensation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

FOUR-STAGE POWER AMPLIFIERS; GAAS FEEDBACK RESISTORS; KU BAND; TEMPERATURE COMPENSATION;

POWER AMPLIFIERS;

EID: 14744279075     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.20673     Document Type: Article

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