High temperature 10 bar pressure sensor based on 3C-SiC/SOI for turbine control applications

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 753-756

  Zappe, S ^a   Franklin, J ^a   Obermeier, E ^a   Eickhoff, M ^b,e   Moller H ^b,f   Krotz G ^b   Rougeot, C ^c   Lefort, O ^c   Stoemenos, J ^d  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b DAIMLER AG   (Germany)

^c Sextant Avionique   (France)

^d ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^e INFINEON TECHNOLOGIES AG   (Germany)

^f DEUTSCHE BAHN AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DOPING (ADDITIVES); FINITE ELEMENT METHOD; REACTIVE ION ETCHING; RESISTORS; SENSORS; SILANES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

PIEZORESISTIVE PRESSURE SENSOR; PIEZORESISTOR;

SILICON CARBIDE;

EID: 14344270017     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.753     Document Type: Article

References (5)

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2. J.S. Shor, D. Goldstein, A.D. Kurz, (1993), IEEE Trans. Electron Dev., 40, p.1093.
3. H. Möller, M. Eickhoff, M. Rapp, H.W. Grüninger, G. Krötz, J. Appl. Phys. A 68, (1999), p. 461.
4. J. von Berg, R. Ziermann, W. Reichert, E. Obermeier, M. Eickhoff, G. Krötz, U. Thoma, C. Cavalloni, J.P. Nendza, (1998), Proc. of the HITEC '98, Albuquerque, New Mexico, USA, p. 245.
5. S. Zappe, E. Obermeier, M. Eickhoff, H. Möller, G. Krötz, E. Bonnette, Y. Barriol, J.L. Decorps, C. Rougeot, O. Lefort, J. Stoemenos, Proc. HITEC 2000 Conf., Albuquerque, New Mexico, USA, 2000.