High performance JBS rectifier - design considerations

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 683-686

  Dahlquist, F ^a   Lendenmann, H ^a   Ostling M ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES CONTROL; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

DRIFT REGION RESISTANCE; JUNCTION BARRIER SCHOTTKY DIODES; PUNCH THROUGH; SECOND ORDER EFFECTS; VOLTAGE DROP;

SCHOTTKY BARRIER DIODES;

EID: 14344268800     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. F. Dahlquist et. al., Mat. Sci. Forum 338-342 (1999), p.1179
2. B.J. Baliga, Solid-State Electron. 28 (1985), p.1089
3. A. O. Konstantinov, Appl. Phys. Lett. 71 (1997), p.90
4. P. G. Neudeck, et. al., IEEE Trans.Electron Dev. March, 46 (1999), p.478
5. W.J. Schaffer, G.H. Negley, K.G. Irvine, J.W. Palmour, Mat. Res. Soc. Symp. Proc. 339 (1994), p. 595