Polytype and polarity of silicon carbide and aluminium nitride films growing by MBE: a nondestructive identification

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 227-230

  Schroter B ^a   Winkelmann, A ^a   Fissel, A ^a   Lebedev, V ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ALUMINUM NITRIDE; ELECTRON DIFFRACTION; KINETIC ENERGY; MOLECULAR BEAM EPITAXY; NONDESTRUCTIVE EXAMINATION; SURFACE PHENOMENA;

ELECTRON CHANNELING PATTERNS; SURFACE CONTAMINATION; SURFACE RECONSTRUCTION; X RAY PHOTOELECTRON DIFFRACTION;

SILICON CARBIDE;

EID: 14344267597     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.227     Document Type: Article

References (5)

1. A. Fissel, B. Schröter and W. Richter, Adv. Sol. State Phys. 38 (1999) p. 87; A. Fissel, K. Pfennighaus, U. Kaiser, B. Schröter, and W. Richter, J. Electron. Mater. 28 (1999) p. 206.
2. A. Fissel, B. Schröter and W. Richter, Adv. Sol. State Phys. 38 (1999) p. 87; A. Fissel, K. Pfennighaus, U. Kaiser, B. Schröter, and W. Richter, J. Electron. Mater. 28 (1999) p. 206.
3. V. Lebedev, B. Schröter, G. Kipshidze, and W. Richter, J. Cryst. Growth 207 (1999) p. 266.
4. B. Schröter, M. Kreuzberg, A. Fissel, K. Pfennighaus, and W. Richter, Mater. Sci. Forum 264-268 (1998) p. 355.
5. B. Schröter, A. Winkelmann, W. Richter, J.Electron Spectrosc.Relat.Phenom. (to be published).