Simulation of bandgap in MOVPE selective area growth of InGaAsP-based photonic integrated circuits

Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04

Volumn , Issue , 2004, Pages 25-26

  Al Amin, Abdullah ^a   Doi, Takeshi ^a   Sakurai, Kenji ^a   Zhang, Zhenrui ^a   Song, Xueliang ^b   Sugiyama, Masakazu ^a   Nakano, Yoshiki ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; FINITE ELEMENT METHOD; LIGHT AMPLIFIERS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTONS; RATE CONSTANTS; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SURFACE REACTIONS;

GAS PHASE DIFFUSION; MULTIPLE QUANTUM WELL (MQW); SEMICONDUCTOR OPTICAL AMPLIFIER (SOA); STRAIN EFFECTS;

INTEGRATED CIRCUITS;

EID: 14244257396     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Ho-jin Oh, Masakazu Sugiyama, Yoshiaki Nakano and Yukihiro Shimogaki, "The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials", J. Crystal Growth, 261 (2-3) 419-426 (2004).
2. Chemical engineering module, FEMLAB 3.0a by COMSOL Inc.
3. Abdullah Al Amin, Song Xueliang et al., "Monolithic Integration of Semiconductor Optical Amplifier with Arrayed Waveguide Grating by MOVPE Selective Area Growth", to be presented at Integrated Photonics Research Topical Meeting (IPR04), San Francisco, USA.