Effects of oxygen stoichiometry on the structural properties of W-Ti-O thin films

Materials Science Forum

Volumn 278-281, Issue PART 2, 1998, Pages 472-477

  Sangaletti, L ^a   Depero, L E ^a   Allieri, B ^a   Groppelli, S ^a   Sberveglieri, G ^a  

^a UNIVERSITY OF BRESCIA   (Italy)

Author keywords

Disorder Effects; Gas Sensors; Microraman; Thin Films; W Ti O; X Ray Diffraction

Indexed keywords

ALUMINA; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; MOLECULAR VIBRATIONS; OXYGEN; SPUTTER DEPOSITION; STOICHIOMETRY; SUBSTRATES; THIN FILMS; X RAY CRYSTALLOGRAPHY; CHEMICAL SENSORS; DEFECTS; REACTIVE SPUTTERING; TITANIUM COMPOUNDS; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION;

DISORDER EFFECTS;

TUNGSTEN COMPOUNDS; THIN FILMS;

DISORDER EFFECT; MICRO-RAMAN; MICRO-RAMAN ANALYSIS; MICRO-RAMAN STUDIES; OXYGEN STOICHIOMETRY; SPUTTERING DEPOSITION; STRUCTURAL DEFECT; VIBRATIONAL PROPERTIES;

EID: 14044265194     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.278-281.472     Document Type: Article

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