Resonant pulse operations on the buried donor charge qubits in semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 23, 2004, Pages 1-4

  Openov, L A ^a  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRON; ENERGY; MATHEMATICAL ANALYSIS; MATHEMATICAL COMPUTING; MICROWAVE RADIATION; NUCLEAR MAGNETIC RESONANCE; QUANTUM MECHANICS; ROTATION; SEMICONDUCTOR;

EID: 13944267824     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.233313     Document Type: Article

References (27)

1. M. A. Nielsen and I. L. Chuang, Quantum Computation and Quantum Information (Cambridge University Press, Cambridge, 2000); A. Olaya-Castro and N. F. Johnson, quant-ph/0406133, (to be published) in Handbook of Theoretical and Computational Nanotechnology.
2. M. A. Nielsen and I. L. Chuang, Quantum Computation and Quantum Information (Cambridge University Press, Cambridge, 2000); A. Olaya-Castro and N. F. Johnson, quant-ph/0406133, (to be published) in Handbook of Theoretical and Computational Nanotechnology.
3. B. E. Kane, Nature (London) 393, 133 (1998).
4. R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A 62, 012306 (2000).
5. B. E. Kane, N. S. McAlpine, A. S. Dzurak, R. G. Clark, G. J. Milburn, He Bi Sun, and H. Wiseman, Phys. Rev. B 61, 2961 (2000).
6. A. Barenco, D. Deutsch, A. Ekert, and R. Jozsa, Phys. Rev. Lett. 74, 4083 (1995).
7. T. Tanamoto, Phys. Rev. A 61, 022305 (2000).
8. L. Fedichkin, M. Yanchenko, and K. A. Valiev, Nanotechnology 11, 387 (2000).
9. T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong, and Y. Hirayama, Phys. Rev. Lett. 91, 226804 (2003).
10. L. DiCarlo, H. J. Lynch, A. C. Johnson, L. I. Childress, K. Crockett, C. M. Marcus, M. P. Hanson, and A. C. Gossard, Phys. Rev. Lett. 92, 226801 (2004).
11. J. R. Petta, A. C. Johnson, C. M. Marcus, M. P. Hanson, and A. C. Gossard, Phys. Rev. Lett. 93, 186802 (2004).
12. S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Rueß, T. Hallam, L. Oberbeck, and R. G. Clark, Phys. Rev. Lett. 91, 136104 (2003).
13. A. S. Dzurak, L. C. L. Hollenberg, D. N. Jamieson, F. E. Stanley, C. Yang, T. M. Buhler, V. Chan, D. J. Reilly, C. Wellard, A. R. Hamilton, C. I. Pakes, A. G. Ferguson, E. Gauja, S. Prawer, G. J. Milburn, and R. G. Clark, cond-mat/0306265 (unpublished).
14. L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly, G. J. Milburn, and R. G. Clark, Phys. Rev. B 69, 113301 (2004).
15. L. M. Kettle, H.-S. Goan, S. C. Smith, C. J. Wellard, L. C. L. Hollenberg, and C. I. Pakes, Phys. Rev. B 68, 075317 (2003).
16. S. D. Barrett and G. J. Milburn, Phys. Rev. B 68, 155307 (2003).
17. L. Fedichkin and A. Fedorov, Phys. Rev. A 69, 032311 (2004).
18. C. Herring, Rev. Mod. Phys. 34, 631 (1962).
19. 3〉 and the corresponding leakage of the quantum information due to population of more than one excited states. Note, however, that this degeneracy is lifted by the surface effects, the gate potentials, and the internal strain due to donors (by analogy with the external stress effects [B. Koiller, X. Hu, and S. Das Sarma, Phys. Rev. B 66, 115201 (2002)]). To find the spacing between the energy levels in the multiplet and thus to quantify the allowed degree of deviation from the resonant conditions, one should make numerical calculations for a specific donor configuration. There is no such a problem in semiconductors with nondegenerate conduction-band edges.
20. L. A. Openov, Phys. Rev. B 60, 8798 (1999); A. V. Tsukanov and L. A. Openov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 38, 94 (2004) [Semiconductors 38, 91 (2004)]; L. A. Openov and A. V. Tsukanov, Pis'ma Zh. Eksp. Teor. Fiz. 80, 572 (2004) [JETP Lett. 80, 503 (2004)].
21. L. A. Openov, Phys. Rev. B 60, 8798 (1999); A. V. Tsukanov and L. A. Openov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 38, 94 (2004) [Semiconductors 38, 91 (2004)]; L. A. Openov and A. V. Tsukanov, Pis'ma Zh. Eksp. Teor. Fiz. 80, 572 (2004) [JETP Lett. 80, 503 (2004)].
22. L. A. Openov, Phys. Rev. B 60, 8798 (1999); A. V. Tsukanov and L. A. Openov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 38, 94 (2004) [Semiconductors 38, 91 (2004)]; L. A. Openov and A. V. Tsukanov, Pis'ma Zh. Eksp. Teor. Fiz. 80, 572 (2004) [JETP Lett. 80, 503 (2004)].
23. L. A. Openov, Phys. Rev. B 60, 8798 (1999); A. V. Tsukanov and L. A. Openov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 38, 94 (2004) [Semiconductors 38, 91 (2004)]; L. A. Openov and A. V. Tsukanov, Pis'ma Zh. Eksp. Teor. Fiz. 80, 572 (2004) [JETP Lett. 80, 503 (2004)].
24. L. A. Openov, Phys. Rev. B 60, 8798 (1999); A. V. Tsukanov and L. A. Openov, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 38, 94 (2004) [Semiconductors 38, 91 (2004)]; L. A. Openov and A. V. Tsukanov, Pis'ma Zh. Eksp. Teor. Fiz. 80, 572 (2004) [JETP Lett. 80, 503 (2004)].
25. T. Brandes and T. Vorrath, Phys. Rev. B 66, 075341 (2002).
26. One can easily check that the Fermi golden rule is justified for evaluation of the relaxation rate in the case under consideration, [see L. A. Openov, Phys. Rev. Lett. 93, 158901 (2004)].
27. D. P. DiVincenzo, Fortschr. Phys. 48, 771 (2000).