Etching characterization of shaped hole high density plasma for using MEMS devices

Surface and Coatings Technology

Volumn 193, Issue 1-3 SPEC. ISS., 2005, Pages 314-318

  Park, W J ^a,b   Kim, Y T ^a   Kim, J H ^a   Suh, S J ^a   Yoon, D H ^a  

^a Sungkyunkwan University   (South Korea)

^b Institute for Advanced Engineering (IAE)   (South Korea)

Author keywords

High density plasma; Hole; MEMS device; Silicon dry etching

Indexed keywords

ASPECT RATIO; ELECTRIC COILS; FABRICATION; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; PLASMAS; SCANNING ELECTRON MICROSCOPY; SILICON; THERMAL EFFECTS;

COIL POWER; HIGH DENSITY PLASMA; MICROSTRUCTURE TECHNOLOGY; PLATEN POWER;

ETCHING;

ETCHING;

EID: 13844267483     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2004.07.017     Document Type: Article

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