An X-band carbon-doped InGaP/GaAs heterojunction bipolar transistor MMIC oscillator

ETRI Journal

Volumn 27, Issue 1, 2005, Pages 75-79

  Kim, Young Gi ^a   Kim, Chang Woo ^b   Kim, Seong Il ^c   Min, Byoung Gue ^c   Lee, Jong Min ^c   Lee, Kyung Ho ^c  

^a Anyang University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

HBT; MMIC; Oscillator; X band

Indexed keywords

BENCHMARKING; CAPACITORS; CARBON; DOPING (ADDITIVES); EPITAXIAL GROWTH; FREQUENCIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OSCILLATIONS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

OSCILLATION FREQUENCY; OSCILLATOR CIRCUIT; PHASE NOISE; X-BAND;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 13844253905     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.05.0104.0009     Document Type: Article

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