Effect of film thickness on the incorporation of Mn interstitiels in Ga 1-xMn xas

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Yu, K M ^a   Walukiewicz, W ^a   Wojtowicz, T ^b,c   Denlinger, J ^a   Scarpulla, M A ^d   Liu, X ^c   Furdyna, J K ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b INSTITUTE OF PHYSICS   (Poland)

^c UNIVERSITY OF NOTRE DAME   (United States)

^d Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL CHANNELS; INTERSTITIAL POSITIONS; MAGNETIC CHARACTERIZATION; SURFACE OXIDES;

CONCENTRATION (PROCESS); CRYSTAL LATTICES; HIGH TEMPERATURE EFFECTS; MANGANESE; SEMICONDUCTING FILMS; THICKNESS MEASUREMENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 13744264102     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1855430     Document Type: Article

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