Ridge structure transformation by group-III species modification during the growth of (AI,Ga)As on patterned substrates

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Williams, R S ^a   Ashwin, M J ^a   Jones, T S ^a   Neave, J H ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH SEQUENCES; HOMOEPITAXIAL GROWTH; PATTERNED SUBSTRATES; RIDGES STRUCTURE;

ALUMINUM; ATOMIC FORCE MICROSCOPY; DEPOSITION; GALLIUM; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE TREATMENT;

MOLECULAR BEAM EPITAXY;

EID: 13744261968     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1849433     Document Type: Article

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