Second-order Raman scattering from n- and p-type 4H-SiC

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 12, 2004, Pages 1555-1560

  Gao, Xin ^a   Sun, Guosheng ^a   Li, Jinmin ^a   Wang, Lei ^a   Zhao, Wanshun ^a   Zhang, Yongxin ^b   Zeng, Yiping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

4H SiC; Cutoff frequency; Second order Raman

Indexed keywords

GALLIUM NITRIDE; PHONONS; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

ACOUSTIC OVERTONE; CUTOFF FREQUENCY; ENERGY DIFFERENCE; OPTICAL OVERTONE; SECOND ORDER RAMAN SCATTERING;

SILICON CARBIDE;

EID: 13744257167     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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