Effect of penetration depth on electrical properties in Pd/Ge/Ti/Au ohmic contact to high-low-doped n-GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 7, 1996, Pages 3841-3844

  Kwak, Joon Seop ^c   Lee, Jong Lam ^a   Baik, Hong Koo ^c   Shin, Dong Won ^a   Park, Chan Gyung ^a   Kim, Haecheon ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

High low doped GaAs; Ohmic contact, penetration depth; Pd

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; EXPERIMENTS; OPTOELECTRONIC DEVICES; PALLADIUM; TRANSMISSION ELECTRON MICROSCOPY;

OHMIC METALS; PENETRATION DEPTH;

OHMIC CONTACTS;

EID: 0030193797     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3841     Document Type: Article

References (13)

1. M. J. Howes and D. V. Morgan: Gallium Arsenide Materials, Devices, and Circuits (Wiley, Chichester, 1986).
2. J.-L. Lee, H. Kirn, J. K. Mun, H. G. Lee and H. M. Park: IEEE Electron Device Lett. 15 (1994) 324.
3. R. P. Gupta and W. S. Khokle, IEEE Electron Device Lett. 6 (1985) 300.
4. L. S. Yu, L. C. Wang, E. D. Marshall, S. S. Lau and T. F. Kuech: J. Appl. Phys. 65 (1989) 1621.
5. J.-L. Lee, D. Kim, S. J. Maeng, H. H. Park, J. Y. Kang and Y. T. Lee: J. Appl. Phys. 73 (1993) 3539.
6. J.-L. Lee, H. Kim, J. K. Mun, O. Kwon, J. J. Lee, I. D. Hwang and H. M. Park: ETRI J. 16 (1995) 1.
7. H. H. Berger: Solid-State Electron. 15 (1972) 145.
8. J. S. Kwak, H. N. Kim, H. K. Baik, J.-L. Lee, H. Kim, H. M. Park and S. K. Noh: Appl. Phys. Lett. 67 (1995) 2465.
9. E. D. Marshall, B. Zhang, L. C. Wang, P. F. Jiao, W. X. Chen, T. Sawada, S. S. Lau, K. L. Kavangh and T. F. Kuech: J. Appl. Phys. 62 (1987) 942.
10. L. Lu-Min Yeh and P. H. Holloway: Mater. Res. Soc. Symp. Proc. 144 (1989) 607.
11. C. J. Cooke and W. Hume-Rothery: J. Less-Common Met. 10 (1966) 42.
12. T. Sands: Mater. Sci. Eng. B 1 (1989) 289.
13. E. H. Rhoderick and R. H. Williams: Metal-Semiconductor Contacts (Clarendon Press, Oxford, 1988) 2nd ed.