Optical properties of Stranski-Krastanov grown three-dimensional Si/Si 1-xGex nanostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 174-179

  Kamenev, B V ^a   Baribeau, J M ^b   Lockwood, D J ^b   Tsybeskov, L ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Dots; Nanocrystals; Photoluminescence; Raman scattering; SiGe

Indexed keywords

ACTIVATION ENERGY; BINDING ENERGY; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUENCHING; RAMAN SCATTERING; SEGREGATION (METALLOGRAPHY); SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

BAND ALIGNMENT; NANOCRYSTALS; RAMAN SIGNALS; SIGE;

NANOSTRUCTURED MATERIALS;

EID: 13544263324     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.047     Document Type: Conference Paper

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