Post-thinning technique for a lifted-out membrane

Journal of Electron Microscopy

Volumn 53, Issue 5, 2004, Pages 493-496

  Sadayama, Shoji ^a   Sugiyama, Yasuhiko ^a   Iwasaki, Koji ^a   Yasaka, Anto ^a  

^a SII NANOTECHNOLOGY INC   (Japan)

Author keywords

FIB; Lift out technique; Low acceleration milling; Post milling

Indexed keywords

GALLIUM; SILICON;

ARTICLE; LABORATORY DIAGNOSIS; METHODOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM; MICROSCOPY, ELECTRON, TRANSMISSION; SILICON; SPECIMEN HANDLING;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; RANDOM ACCESS STORAGE;

ACCELERATING VOLTAGES; DYNAMIC RANDOM ACCESS MEMORY; FIB; GA ION BEAM; LIFT-OUT TECHNIQUES; LOW-ACCELERATION MILLING; NOVEL TECHNIQUES; POST-MILLING; THINNINGS;

MILLING (MACHINING);

EID: 13444279095     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/dfh085     Document Type: Article

References (3)

1. Overwijk M H F, van den Heuvel F C, and Bulle-Liuwma W T (1993) Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam. J. Vac. Sci. Technol. B 11: 2021-2024.
2. Patterson R J, Mayer D, Weaver L, and Phaneuf M W (2002) 'H-bar lift-out' and 'plan-view lift-out': robust, re-thinnable FIB-TEM preparation for ex-situ cross-sectional and plan-view FIB specimen preparation. Microsc. Microanal. 8: 566-567.
3. Kato N I, Kohno Y, and Saka H (1999) Side-wall damage in a transmission electron microscopy specimen of crystalline Si prepared by focused ion beam etching. J. Vac. Sci. Technol. A 17: 1201-1204.