Depth profiling by GDOES: Application of hydrogen and d.c. bias voltage corrections to the analysis of thin oxide films

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 278-283

  Michler, J ^a   Aeberhard, M ^a   Velten, D ^b   Winter, S ^b   Payling, R ^a,c   Breme, J ^b  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b SAARLAND UNIVERSITY   (Germany)

^c Surface Analytical   (Australia)

Author keywords

Depth profiling; GDOES; Thin film oxides; Titanium medical implants

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPTH PERCEPTION; ELECTRIC POTENTIAL; EMISSION SPECTROSCOPY; GLOW DISCHARGES; HYDROGEN; HYDROXYLATION; IMPLANTS (SURGICAL); OXIDATION; OXIDES; SOL-GELS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILING; GDOES; GLOW DISCHARGE OPTICAL EMISSION SPECTROMETRY (GDOES); THIN FILM OXIDES; TITANIUM MEDICAL IMPLANTS;

THIN FILMS;

EID: 1342344897     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01105-2     Document Type: Conference Paper

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