Fabrication and characteristics of an InP single HBT and waveguide PD on double stacked layers for an OEMMIC

ETRI Journal

Volumn 26, Issue 1, 2004, Pages 61-64

  Kim, Hong Seung ^a   Kim, Hye Jin ^a   Hong, Sun Eui ^a   Jung, Dong Yun ^a   Nam, Eunsoo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Heterojunction bipolar transistor (HBT); InP; Optoelectronic millimeter wave monolithic integrated circuit (OEMMIC); Wave guide photodiode

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT SENSITIVE MATERIALS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL WAVEGUIDES; PHOTODIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

OPTOELECTRONIC MILLIMETER WAVE MONOLITHIC INTEGRATED CIRCUIT; WAVE GUIDE PHOTODIODE;

INTEGRATED OPTOELECTRONICS;

EID: 1342325149     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.04.0203.0018     Document Type: Letter

References (4)

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