Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 516-523

  Chang, T C ^a   Yan, S T ^b   Liu, P T ^c   Lin, Z W ^b   Aoki, H ^d   Sze, S M ^b,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d SÜD CHEMIE AG   (Germany)

Author keywords

Bias temperature stress; Low k; MSZ; Schottky emission; Space charge limited current; Thermal stress

Indexed keywords

ANNEALING; CAPACITANCE; COPPER; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; ELECTRIC VARIABLES MEASUREMENT; ELECTROMIGRATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDRATION; OXIDATION; PERMITTIVITY; THERMAL STRESS;

BIAS TEMPERATURE STRESS; LOW-K; MSZ; SCHOTTKY EMISSION; SPACE CHARGE LIMITED CURRENT;

DIELECTRIC MATERIALS;

EID: 1342302431     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.07.014     Document Type: Conference Paper

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