Effect of electrostatic chucking and substrate thickness uniformity on extreme ultraviolet lithography mask flatness

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 3043-3048

  Mikkelson, A ^a   Engelstad, R ^a   Sohn, J ^a   Lovell, E ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); IMAGE PLACEMENT; LOW THERMAL EXPANSION MATERIALS (LTEM); MASK SUBSTRATES;

CHUCKING MACHINES; CLAMPING DEVICES; LIGHTING; LITHOGRAPHY; MASKS; SEMICONDUCTOR MATERIALS; SUBSTRATES; THERMAL EXPANSION;

ELECTROSTATICS;

EID: 13244276443     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1808738     Document Type: Conference Paper

References (9)

1. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 2001).
2. K. Blaedel et al., Proc. SPIE 4688, 767 (2002).
3. SEMI P37-1101, SEMI Standard Specification for Extreme Ultraviolet Lithography Mask Substrates.
4. F. Sobel et al., Proc. SPIE 5256, 1259 (2003).
5. SEMI website at http://www.semi.org
6. C. Walton et al., SEMI EUV Mask Handling, Chucking, and Standards Workshop, Antwerp, Belgium, Oct. 2003, available at www.sematech.org/resources/litho/meetings/euvl/20031003/index.htm
7. Wolfram Research website at http://mathworld.wolfram.com/LegendrePolynomial.html
8. Corning website at http://www.corning.com
9. Schott North America website at http://www.us.schott.com