Corrigendum to ''Changes in elastic deformation of strained si by microfabrication''. [Materials Science in Semiconductor Processing 8 (2005) 181-185] (DOI:10.1016/j.mssp.2004.09.037);Changes in elastic deformation of strained Si by microfabrication

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 181-185

  Arimoto, Keisuke ^a   Furukawa, Daisuke ^a   Yamanaka, Junji ^a   Nakagawa, Kiyokazu ^a   Sawano, Kentarou ^b   Koh, Shinji ^b   Shiraki, Yasuhiro ^b   Usami, Noritaka ^c  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Raman spectroscopy; SiGe; Strained Si

Indexed keywords

BAND STRUCTURE; DEFORMATION; DEPOSITION; ELASTICITY; FREQUENCIES; MICROSTRUCTURE; RAMAN SPECTROSCOPY; STRAIN;

MICROFABRICATION; RAMAN FREQUENCIES; SIGE; STRAINED SI;

SEMICONDUCTING SILICON;

EID: 13244255686     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.04.002     Document Type: Erratum

References (8)

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8. M. Chandrasekhar, J.B. Renucci, and M. Cardona Effects of interband excitations on Raman phonons in heavily doped n-Si Phys Rev B 17 1978 1623