High-temperature annealing behavior of ion-implanted spinel single crystals

Journal of Materials Research

Volumn 19, Issue 12, 2004, Pages 3463-3473

  Enescu, S E ^a,b   Thome L ^a   Gentils, A ^a,c   Thome T ^d  

^a 91405 Orsay Campus   (France)

^b HORIA HULUBEI NATIONAL INSTITUTE OF PHYSICS AND NUCLEAR ENGINEERING   (Romania)

^c DEN/DEC/SESC   (France)

^d CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CESIUM; CHEMICAL MODIFICATION; COMPOSITION; CRYSTAL LATTICES; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; MAGNESIUM COMPOUNDS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY; VOLUME FRACTION;

COMPOSITION CHANGES; DAMAGE; HIGH TEMPERATURE ANNEALING; MAGNESIUM ALUMINATE; SPINEL SINGLE CRYSTALS; SUBSTITUTIONAL LATTICE SITES;

SINGLE CRYSTALS;

EID: 12944327761     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0446     Document Type: Article

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