EBIC analysis of SiC mesa diodes

Microelectronics Reliability

Volumn 38, Issue 3, 1998, Pages 373-379

  Jargelius, M ^a   Gustafsson, U ^b   Bakowski, M ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC SPACE CHARGE; ELECTRON BEAMS; ETCHING; INDUCED CURRENTS; MICROSCOPIC EXAMINATION; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

ELECTRON BEAM INDUCED CURRENTS (EBIC) MICROSCOPY; MESA DIODES; MINORITY CARRIER LIFETIME; SURFACE CHARGE DENSITY;

SEMICONDUCTOR DIODES;

EID: 0032020984     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00056-5     Document Type: Article

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