Molecular beam epitaxial growth of heteropolytypic and low-dimensional structures of SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Fissel, A ^a   Kaiser, U ^a   Schroter B ^a   Krausslich J ^a   Hobert, H ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; NUCLEATION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STACKING FAULTS; SUBSTRATES; SURFACE TREATMENT; THERMAL EFFECTS;

HETEROPOLYTYPIC STRUCTURES; SOLID-SOURCE MOLECULAR BEAM EPITAXY (MBE);

SILICON CARBIDE;

EID: 12944295356     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)

1. A. Fissel et al., J. Cryst. Growth, 154 (1995), p. 72.
2. E. Ducke et al., Inst. Phys. Conf. Ser., 142 (1996), p. 609.
3. A. Fissel et al., Adv. Sol. State Phys., 38 (1999), p. 87.
4. A. Fissel at al., Mater. Sci. Eng. B, 61-62 (1999), p. 139.
5. A. Bauer, Mater. Sci. Technol. B, 61-62 (1999), p. 179.
6. A. Fissel, J. Cryst. Growth (submitted).
7. A. Fissel et al., J. Electron. Mater., 28 (1999), p. 206.
8. Ch. Haberstroh et al., J. Appl. Phys., 76 (1994), p. 509.
9. W.J. Choyke and L. Patrick, Phys. Rev. B, 4 (1971), p. 1843.