Epitaxial growth of SiC-heterostructures on α-SiC(0001) by solid-source MBE

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 139-142

  Fissel, A ^a   Kaiser, U ^a   Krausslich J ^a   Pfennighaus, K ^a   Schroter B ^a   Schulz, J ^a   Richter, W ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Epitaxial growth; SiC heterostructures; Solid source molecular beam epitaxy; SiC(0001)

Indexed keywords

CRYSTAL ORIENTATION; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUPERSATURATION;

SOLID-SOURCE MOLECULAR BEAM EPITAXY (SSMBE); STEP-FLOW GROWTH;

HETEROJUNCTIONS;

EID: 0007152049     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00487-5     Document Type: Article

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