Ultra-low energy SIMS depth profile analysis of MOVPE grown InAlGaAs/AlGaAs/GaAs nanostructures

Reviews on Advanced Materials Science

Volumn 8, Issue 1, 2004, Pages 16-21

  Konarski, Piotr ^a   Ćwil, Michał ^a,b   Zaremba, Marcin ^b   Radziewicz, Damian ^c   Ściana, Beata ^c   Kozłowski, Janusz ^c  

^a TELE AND RADIO RESEARCH INSTITUTE   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; INTERFACES (MATERIALS); ION BEAMS; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

ALUMINUM GALLIUM ARSENIDE; DEPTH PROFILE ANALYSIS; INDIUM ALUMINUM GALLIUM ARSENIDE; LAYERED SYSTEMS; MOLAR FRACTION;

NANOSTRUCTURED MATERIALS;

EID: 12944250781     PISSN: 16065131     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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