GaN crystal growth on sapphire substrate using islandlike GaN buffer formed by repetition of thin-layer low-temperature deposition and annealing in rf-plasma molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 12 A, 2004, Pages

  Shimizu, Mitsuaki ^a   Hirata, Yoshitaka ^b   Piao, Guanxi ^a   Okumura, Hajime ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

GaN; Islandlike buffer; Low temperature buffer; MBE; Rf plasma

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DEPOSITION; DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR LASERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

FULL WIDTH HALF MAXIMUM (FWHM); ISLANDLIKE BUFFER; LOW-TEMPERATURE BUFFER; RF-PLASMAS;

GALLIUM NITRIDE;

EID: 12844288631     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1537     Document Type: Article

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