Resolution of calixarene resist under low energy electron irradiation

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 323-326

  Fujita, J ^a   Ohnishi, Y ^a,c   Manako, S ^a   Ochiai, Y ^a   Nomura, E ^a   Matsui, S ^b  

^a NEC CORPORATION   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c NONE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON BEAMS; IRRADIATION; LITHOGRAPHY; MONTE CARLO METHODS;

CALIXARENE RESIST;

PHOTORESISTS;

EID: 12844284850     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00074-4     Document Type: Article

References (3)

1. J. Fujita, Y. Ohnishi, Y. Ochiai, and S. Matsui, Appl. Phys. Lett. ,68(1996)1297.
2. Y. Ohnishi, J. Fujita, Y. Ochiai, and S. Matsui, Microelectronic Engineering, 35(1997)117.
3. J. Fujita, Y. Ohnishi, Y. Ochiai, E. Nomura, and S. Matsui, J. Vac. Sci. Tecnol. B, Vol 14 (1996) 4247.