Structure of ultrathin epitaxial CeO2 films grown on Si(111)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7881-7883

  Joumori, Shinji ^a   Nakajima, Kaoru ^a   Suzuki, Motofumi ^a   Kimura, Kenji ^a   Nishikawa, Yukie ^b   Matsushita, Daisuke ^b   Yamaguchi, Takeshi ^b   Satou, Nobutaka ^b  

^a KYOTO UNIVERSITY   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

CeO2; Crystal structure; Epitaxial growth; High resolution RBS; Strain

Indexed keywords

CERIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; LATTICE VIBRATIONS; OXYGEN; SILICON; STRAIN;

CEO2; HIGH-RESOLUTION RBS; LATTICE MISMATCH; PSEUDOMORPHIC GROWTH;

ULTRATHIN FILMS;

EID: 12844278667     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7881     Document Type: Conference Paper

References (6)

1. M. Yoshimoto, H. Nagata, T. Tsukahara and H. Koinuma: Jpn. J. Appl. Phys. 29 (1990) L1199.
2. Y. Nishikawa, N. Fukushima, N. Yasuda, K. Nakamura and S. Ikegawa: Jpn. J. Appl. Phys. 41 (2002) 2480.
3. D. Matsushita, Y. Nishikawa, N. Satou, M. Yoshiki, T. Shimizu, T. Yamaguchi, H. Satake and N. Fukushima: Ext. Abstr. 2003 Int. Conf. Solid State Devices and Materials, Tokyo, 2003, p. 64.
4. K. Kimura, K. Oshima and M. Mannami: Appl. Phys. Lett. 64 (1994) 2232.
5. K. Nakajima, S. Joumori, M. Suzuki, K. Kimura, T. Osipowicz, K. L. Tok, J. Z. Zheng, A. See and B. C. Zhang: Appl. Phys. Lett. 83 (2003) 296.
6. S. Ikegawa and Y. Motoi: Phys. Rev. B 61 (2000) 6334.