Low-chirp 10 Gbit/s InP-based Mach-Zehnder modulator driven by 1.2 V single electrical signal

Electronics Letters

Volumn 41, Issue 1, 2005, Pages 40-41

  Akiyama, S ^a   Itoh, H ^a   Takeuchi, T ^a   Kuramata, A ^b   Yamamoto, T ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b Sumitomo Electric Device Innovations USA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; ELECTRICAL SIGNAL; EXTINCTION CURVE; PHASE MODULATORS;

ELECTRIC POTENTIAL; ELECTROOPTICAL EFFECTS; INTERFEROMETERS; LIGHT TRANSMISSION; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; PHASE MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMITTERS;

LIGHT MODULATORS;

EID: 12844277334     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057033     Document Type: Article

References (8)

1. Rolland, C., Moore, R.S., Shepherd, F., and Hillier, G.: '10 Gbit/s, 1.56 μm multiquantum well InP/InGaAsP Mach-Zehnder optical modulator', Electron, Lett., 1993, 29, (5), pp. 471-472
2. Sano, H., Inoue, H., Tanaka, S., and Ishida, K.: 'High-speed InGaAs/InAlAs MQW Mach-Zehnder-type optical modulator'. OFC/IOOC'93, San Jose, CA, USA, February 1993, Paper ThK5 pp. 215-217
3. Akulova, Y.A., Fish, G.A., Koh, P., Kozodoy, P., Larson, M., Schow, C., Hall, E., Marchand H., Abraham, P., and Coldren, L.A.: 10 Gbit/s Mach-Zehnder modulator integrated with widely-tunable sampled grating DBR laser'. OFC'04, Los Angeles, CA, USA, February 2004, Paper TuE4
4. pp'. OFC'04, Los Angeles, CA, USA, February 2004, Paper PDP14
5. Akiyama, S., Hirose, S., Watanabe, T., Ueda, M., Sekiguchi, S., Morii, N., Yamamoto, T., Kuramata, A., and Soda, H.: 'Novel InP-based Mach-Zehnder modulator for 40 Gbit/s integrated lightwave source'. ISLC'02, Garmisch-Partenkirchen, Germany, 2002, Paper TuC1, pp. 57-58
6. pp'. 16th Int. Conf. on Indium Phosphide Related Materials, Kagoshima, Japan, May-June 2004, Paper ThA1-4, pp. 581-584
7. Hoffmann, D., Staroske, S., and Velthaus, K.-O.: '45 GHz bandwidth traveling wave electrode Mach-Zehnder modulator with integrated spot size converter'. 16th Int. Conf. on Indium Phosphide Related Materials, Kagoshima, Japan, May-June 2004, Paper ThA1-5, pp. 585-588
8. Walker, R.G.: 'High-speed III-V semiconductor intensity modulators', J. Quantum Electron., 1991, 27, (3), pp. 654-667