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Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1509-1514

Photo- and electroluminescence of erbium-doped silicon

(5) Lanzerstorfer, S a Stepikhova, M a,b Hartung, J c Skierbiszewski, C d Jantsch, W a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD (Russian Federation)

c UNIVERSITY OF MANCHESTER (United Kingdom)

d INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

Decay time; Electroluminescence; Erbium; Excitation mechanism; Rise time; Silicon

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); ELECTROLUMINESCENCE; ENERGY GAP; ENERGY TRANSFER; ERBIUM; ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

DEEXCITATION PROCESSES;

LIGHT EMITTING DIODES;

EID: 12844275214 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.258-263.1509 Document Type: Article

Times cited : (4)

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